Al-P-Cds/N-Cds/Zn1-Xcdxs Structures for Solar Cells

  • maarif Ali Jafarov Physics
  • E.F Nasirov Baku State University, Baku, Azerbaijan
  • S.A Jahangirova Baku State University, Baku, Azerbaijan
  • R.M Mammadov Baku State University, Baku, Azerbaijan
Keywords: thin film, solar cell, heterojunctions, compounds, potential barrier


In this paper we report some properties of thin film photocells prepared on the basis of Al/p-CdS/n-CdS/Zn1-xCdxS heterojunctions. These heterojunctions were prepared by the method of chemical and electrochemical deposition from solution in a uniform work cycle. The open-circuit photovoltage (Uoc), short circuit-current density (Iscc) and efficiency of the Al/p-CdS/n-CdS/Zn0.6Cd0.4S heterojunctions were 650 mV; 35 mA/cm2 and 11%, accordingly. The I-U fill factor was 0.68. The value of Uoc increases and Iscc decreases by increasing of Zn in Zn1-xCdxS material.


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Author Biographies

E.F Nasirov, Baku State University, Baku, Azerbaijan

Baku State University, Baku, Azerbaijan

S.A Jahangirova, Baku State University, Baku, Azerbaijan

Baku State University, Baku, Azerbaijan

R.M Mammadov, Baku State University, Baku, Azerbaijan

Baku State University, Baku, Azerbaijan


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How to Cite
Jafarov, maarif A., Nasirov, E., Jahangirova, S., & Mammadov, R. (2018). Al-P-Cds/N-Cds/Zn1-Xcdxs Structures for Solar Cells. To Physics Journal, 1(3), 217-224. Retrieved from
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